Excessive-Efficiency 1200V MOSFETs For Various Functions


The 1200V MOSFETs improve energy expertise for purposes like electrical car charging, vitality storage, and industrial energy provides, guaranteeing effectivity and reliability.


SemiQ has lately expanded its QSiC Silicon Carbide module portfolio by introducing a brand new household of 1200V MOSFETs, out there with or with out 1200V SiC Schottky Diodes in a SOT-227 bundle. The corporate claims that the SiC modules, produced from high-performance ceramics, are designed to ship dependable efficiency below harsh situations. They boast options like excessive breakdown voltage, high-temperature operation, low Rds(On) shift throughout the working temperature vary, and distinctive gate oxide stability and ruggedness.

The modules are fitted to varied purposes, together with electrical car charging, DC-DC converters, vitality storage programs, and energy provides in medical, photo voltaic, wind vitality, and knowledge centre sectors.

The design is characterised by low switching losses and minimal junction-to-case thermal resistance, guaranteeing environment friendly operation. It’s notably rugged and designed for straightforward mounting. Moreover, it permits for direct assist to a heatsink, because of its remoted bundle, enhancing its practicality and ease of use.

The high-speed switching SiC MOSFETs characteristic a Kelvin reference, guaranteeing secure operation. These elements are additionally easy to drive, combining superior pace capabilities with user-friendly operation.

To make sure top-notch high quality, all QSiC modules endure rigorous wafer-level gate burn-in testing for gate oxide stability and different stress exams like gate stress and high-temperature reverse bias drain stress. These procedures are essential for assembly industrial-grade high quality requirements.

A number of the key specs of the modules embody:

  • Drain-Supply Voltage: 1200V
  • Steady Drain Present: 81-113A
  • Physique Diode Drain Present: 97A
  • Pulsed Drain Present: 250A
  • Energy Dissipation: 395W
  • Working & Storage Temperature: -55…175 °C

Dr. Timothy Han, President at SemiQ, mentioned, “We’re delighted with the client enter and desires for our new household of QSiC™ high-power modules and thank our SemiQ group, who’ve labored tirelessly to construct and qualify our newest QSiC™ modules.”


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